New photoluminescence lines in Vanadium doped GaAs grown by MOVPE. - A. Bchetnia; Ahmed Rebey; B. El Jani; J. Cernogora; J.-L. Fave (Microelectron. J., 2003)

GaN growth on porous silicon by MOVPE. - Tarek Boufaden; N. Chaaben; M. Christophersen; B. El Jani (Microelectron. J., 2003)

Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE. - N. Chaaben; Tarek Boufaden; M. Christophersen; B. El Jani (Microelectron. J., 2004)

Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs. - Ahmed Rebey; Z. Chine; W. Fathallah; B. El Jani; E. Goovaerts; S. Laugt (Microelectron. J., 2004)

Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry. - Ahmed Rebey; M. M. Habchi; Zohra Benzarti; B. El Jani (Microelectron. J., 2004)

In depth study of the compensation in annealed heavily carbon doped GaAs. - Ahmed Rebey; W. Fathallah; B. El Jani (Microelectron. J., 2006)

Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response. - C. Touzi; F. Omnès; Tarek Boufaden; P. Gibart; B. El Jani (Microelectron. J., 2006)

AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response. - M. M. Habchi; Ahmed Rebey; B. El Jani (Microelectron. J., 2008)