Evolution of MOS-bipolar power semiconductor technology. - B. Jayant Baliga (Proc. IEEE, 1988)

Power semiconductor devices for variable-frequency drives. - B. Jayant Baliga (Proc. IEEE, 1994)

The future of power semiconductor device technology. - B. Jayant Baliga (Proc. IEEE, 2001)

SiC power devices: From conception to social impact. - B. Jayant Baliga (ESSDERC, 2016)

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET). - WoongJe Sung; B. Jayant Baliga (IEEE Trans. Ind. Electron., 2017)

Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization. - B. Jayant Baliga (DRC, 2018)

Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. - Aditi Agarwal; Kijeong Han; B. Jayant Baliga (DRC, 2019)

Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. - Aditi Agarwal; Kijeong Han; B. Jayant Baliga (ESSDERC, 2019)

Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation. - Ajit Kanale; B. Jayant Baliga (IECON, 2019)

Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress. - Ajit Kanale; Kijeong Han; B. Jayant Baliga; Subhashish Bhattacharya (IRPS, 2019)

2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. - Aditi Agarwal; Kijeong Han; B. Jayant Baliga (DRC, 2020)

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement. - Ajit Kanale; B. Jayant Baliga (IEEE Access, 2021)

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application. - Sneha Narasimhan; Ajit Kanale; Subhashish Bhattacharya; B. Jayant Baliga (IEEE Access, 2023)