Transient effects on high voltage diode stack under reverse bias. - Václav Papez; B. Kojecký; J. Kozísek; J. Hejhal (Microelectron. Reliab., 2003)

Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices. - B. Kojecký; Václav Papez; D. Sámal (Microelectron. J., 2006)

Reliability of reverse properties of power semiconductor devices: : Influence of surface dielectric layer and its experimental verification. - Václav Papez; B. Kojecký; D. Sámal (Microelectron. J., 2008)

Investigation of flicker noise in silicon diodes under reverse bias. - Jirí Hájek; Václav Papez; B. Kojecký (Microelectron. Reliab., 2012)

Influence of surface states on the reverse and noise properties of silicon power diodes. - Václav Papez; Jirí Hájek; B. Kojecký (IET Circuits Devices Syst., 2014)