Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. - B. Mounika; J. Ajayan; Sandip Bhattacharya; D. Nirmal; V. Bharath Sreenivasulu; N. Aruna Kumari (Microelectron. J., 2023)

A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers. - B. Mounika; Asisa Kumar Panigrahy; J. Ajayan; N. Khadar Basha; Vakkalakula Bharath Sreenivasulu; M. Durga Prakash; Sandip Bhattacharya; D. Nirmal (IEEE Access, 2024)