Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. - Badreddine Zerroumda; Fayçal Djeffal; Toufik Bentrcia; Hichem Ferhati (ICSENT, 2018)

Investigation of a new power junctionless MOSFET using 2-D numerical simulation. - Badreddine Zerroumda; Fayçal Djeffal; Saïd Benaggoune; Hichem Ferhati (SSD, 2022)

A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level Investigation. - Badreddine Zerroumda; Hichem Ferhati; Fayçal Djeffal; Adel Bendjerad (CCE, 2023)