A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface. - Chang-Kyo Lee; Min-Su Ahn; Daesik Moon; Kiho Kim; Yoon-Joo Eom; Won-Young Lee; Jongmin Kim; Sanghyuk Yoon; Baekkyu Choi; Seokhong Kwon; Joon-Young Park; Seung-Jun Bae; et al. (VLSIC, 2015)