Residual stress characterization of GaN microstructures using bent-beam strain sensors. - Jianan Lv; Zhenchuan Yang; Guizhen Yan; Yong Cai; Baoshun Zhang; Kevin J. Chen (NEMS, 2010)

TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs. - Yubo Wang; Fan Li; Xuan Chi; Wen Liu; Guohao Yu; Zhongkai Du; Baoshun Zhang (ICICDT, 2022)

A Bin-by-Bin Calibration with Neural Network for FPGA-Based Tapped-Delay-Line Time-to-Digital Converter. - Yue Xu; Jie Xie; Zhiwei Xing; Wenqiang Yuan; Guanqun Yu; Zhongmin Zeng; Baoshun Zhang; Dongmin Wu (RCAR, 2022)