An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. - Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Massoud Pedram (J. Zhejiang Univ. Sci. C, 2012)

Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability. - Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2012)

An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. - Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2013)