The effect of noise and depolarization on hyperpolarized tracers perfusion assessment. - Behzad Ebrahimi; Scott D. Swanson; Timothy E. Chupp (ISBI, 2007)

Low Standby Power and Robust FinFET Based SRAM Design. - Behzad Ebrahimi; Saeed Zeinolabedinzadeh; Ali Afzali-Kusha (ISVLSI, 2008)

A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution Method. - Behzad Ebrahimi; Scott D. Swanson; Timothy E. Chupp (IEEE Trans. Biomed. Eng., 2010)

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. - Mehdi Saremi; Behzad Ebrahimi; Ali Afzali-Kusha; Saeed Mohammadi 002 (Microelectron. Reliab., 2011)

Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage. - Behzad Ebrahimi; Masoud Rostami; Ali Afzali-Kusha; Massoud Pedram (IEEE Trans. Very Large Scale Integr. Syst., 2011)

G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems. - Hossein Aghababa; Behzad Ebrahimi; Mehdi Saremi; Vahid Moalemi; Behjat Forouzandeh (IEICE Electron. Express, 2012)

An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. - Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Massoud Pedram (J. Zhejiang Univ. Sci. C, 2012)

Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability. - Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2012)

Probability calculation of read failures in nano-scaled SRAM cells under process variations. - Hossein Aghababa; Behzad Ebrahimi; Ali Afzali-Kusha; Massoud Pedram (Microelectron. Reliab., 2012)

Robust polysilicon gate FinFET SRAM design using dynamic back-gate bias. - Behzad Ebrahimi; Ali Afzali-Kusha; Nader Sehatbakhsh (DTIS, 2013)

An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. - Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2013)

Robust FinFET SRAM design based on dynamic back-gate voltage adjustment. - Behzad Ebrahimi; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2014)

High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. - Roohollah Yarmand; Behzad Ebrahimi; Hassan Afzali-Kusha; Ali Afzali-Kusha; Massoud Pedram (ISQED, 2015)

A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages. - Behzad Ebrahimi; Reza Asadpour; Ali Afzali-Kusha; Massoud Pedram (Int. J. Circuit Theory Appl., 2015)

A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. - Mohammad Ansari; Hassan Afzali-Kusha; Behzad Ebrahimi; Zainalabedin Navabi; Ali Afzali-Kusha; Massoud Pedram (Integr., 2015)

Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs. - Kolsoom Mehrabi; Behzad Ebrahimi; Roohollah Yarmand; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2016)

Low-power data encoding/decoding for energy-efficient static random access memory design. - Ghasem Pasandi; Kolsoom Mehrabi; Behzad Ebrahimi; Sied Mehdi Fakhraei; Ali Afzali-Kusha; Massoud Pedram (IET Circuits Devices Syst., 2019)

Single-Ended 10T SRAM Cell with High Yield and Low Standby Power. - Erfan Shakouri; Behzad Ebrahimi; Nima Eslami; Mohammad Chahardori (Circuits Syst. Signal Process., 2021)

HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network. - Negin Mohajeri; Behzad Ebrahimi; Massoud Dousti (J. Circuits Syst. Comput., 2021)

A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications. - Bahareh Seyedzadeh Sany; Behzad Ebrahimi (Int. J. Circuit Theory Appl., 2022)

BEAD: Bounded error approximate adder with carry and sum speculations. - Afshin Khaksari; Omid Akbari; Behzad Ebrahimi (Integr., 2023)

Accurate and Compact Approximate 4:2 Compressors with GDI Structure. - Mohammad Ghanatabadi; Behzad Ebrahimi; Omid Akbari (Circuits Syst. Signal Process., 2023)

Novel hybrid TFET-FinFET 12T SRAM cells with enhanced write margin and read performance. - Seyed Arman Sabaghpour; Behzad Ebrahimi; Pooya Torkzadeh (Integr., 2025)