High-resolution SILC measurements of thin SiO2 at ultra low voltages. - Stefano Aresu; Ward De Ceuninck; R. Dreesen; Kris Croes; E. Andries; Jean Manca; Luc De Schepper; Robin Degraeve; Ben Kaczer; Marc D'Olieslaeger (Microelectron. Reliab., 2002)

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. - Ben Kaczer; Robin Degraeve; Mahmoud Rasras; An De Keersgieter; K. Van de Mieroop; Guido Groeseneken (Microelectron. Reliab., 2002)

A new method for the analysis of high-resolution SILC data. - Stefano Aresu; Ward De Ceuninck; G. Knuyt; J. Mertens; Jean Manca; Luc De Schepper; Robin Degraeve; Ben Kaczer; Marc D'Olieslaeger; Jan D'Haen (Microelectron. Reliab., 2003)

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. - Robert O'Connor; Greg Hughes; Robin Degraeve; Ben Kaczer (Microelectron. Reliab., 2005)

Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design. - Antonis Papanikolaou; Miguel Miranda; Hua Wang; Francky Catthoor; M. Satyakiran; Pol Marchal; Ben Kaczer; C. Bruynseraede; Zsolt Tokei (VLSI-SoC, 2006)

FinFET and MOSFET preliminary comparison of gate oxide reliability. - Raul Fernández; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Ben Kaczer; Guido Groeseneken (Microelectron. Reliab., 2006)

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. - Ben Kaczer; Robin Degraeve; Philippe Roussel; Guido Groeseneken (Microelectron. Reliab., 2007)

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. - A. Shickova; Ben Kaczer; Anabela Veloso; Marc Aoulaiche; M. Houssa; Herman E. Maes; Guido Groeseneken; J. A. Kittl (Microelectron. Reliab., 2007)

Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. - Georges G. E. Gielen; Pieter De Wit; Elie Maricau; Johan Loeckx; Javier Martín-Martínez; Ben Kaczer; Guido Groeseneken; Rosana Rodríguez; Montserrat Nafría (DATE, 2008)

A CMOS circuit for evaluating the NBTI over a wide frequency range. - R. Fernández-García; Ben Kaczer; Guido Groeseneken (Microelectron. Reliab., 2009)

Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits. - Paolo Magnone; Felice Crupi; Massimo Alioto; Ben Kaczer (ISCAS, 2010)

Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. - Felice Crupi; Massimo Alioto; Jacopo Franco; Paolo Magnone; Ben Kaczer; Guido Groeseneken; Jérôme Mitard; Liesbeth Witters; Thomas Y. Hoffmann (ISCAS, 2011)

Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements. - Paolo Magnone; Felice Crupi; Massimo Alioto; Ben Kaczer; Brice De Jaeger (IEEE Trans. Very Large Scale Integr. Syst., 2011)

Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. - Halil Kukner; Pieter Weckx; Praveen Raghavan; Ben Kaczer; Francky Catthoor; Liesbet Van der Perre; Rudy Lauwereins; Guido Groeseneken (DSD, 2012)

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. - Jacopo Franco; Ben Kaczer; Jérôme Mitard; Maria Toledano-Luque; Felice Crupi; Geert Eneman; Ph. J. Rousse; Tibor Grasser; M. Cho; Thomas Kauerauf; Liesbeth Witters; Geert Hellings; et al. (ICICDT, 2012)

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. - Jacopo Franco; S. Graziano; Ben Kaczer; Felice Crupi; Lars-Åke Ragnarsson; Tibor Grasser; Guido Groeseneken (Microelectron. Reliab., 2012)

Defect-centric perspective of time-dependent BTI variability. - Maria Toledano-Luque; Ben Kaczer; Jacopo Franco; Philippe Roussel; Tibor Grasser; Guido Groeseneken (Microelectron. Reliab., 2012)

Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. - Felice Crupi; Massimo Alioto; Jacopo Franco; Paolo Magnone; Ben Kaczer; Guido Groeseneken; Jérôme Mitard; Liesbeth Witters; Thomas Y. Hoffmann (IEEE Trans. Very Large Scale Integr. Syst., 2012)

Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. - Halil Kükner; Pieter Weckx; Praveen Raghavan; Ben Kaczer; Francky Catthoor; Liesbet Van der Perre; Rudy Lauwereins; Guido Groeseneken (Microprocess. Microsystems, 2013)

Bias Temperature Instability analysis of FinFET based SRAM cells. - Seyab Khan; Innocent Agbo; Said Hamdioui; Halil Kukner; Ben Kaczer; Praveen Raghavan; Francky Catthoor (DATE, 2014)

NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. - Halil Kukner; Pieter Weckx; Sebastien Morrison; Praveen Raghavan; Ben Kaczer; Francky Catthoor; Liesbet Van der Perre; Rudy Lauwereins; Guido Groeseneken (DSD, 2014)

Impact of Off State Stress on advanced high-K metal gate NMOSFETs. - Alessio Spessot; Marc Aoulaiche; Moonju Cho; Jacopo Franco; Tom Schram; Romain Ritzenthaler; Ben Kaczer (ESSDERC, 2014)

Characterization and modeling of charge trapping: From single defects to devices. - Tibor Grasser; Gerhard Rzepa; Michael Waltl; Wolfgang Goes; Karina Rott; Gunnar Andreas Rott; Hans Reisinger; Jacopo Franco; Ben Kaczer (ICICDT, 2014)

Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. - Halil Kukner; Moustafa A. Khatib; Sebastien Morrison; Pieter Weckx; Praveen Raghavan; Ben Kaczer; Francky Catthoor; Liesbet Van der Perre; Rudy Lauwereins; Guido Groeseneken (ISQED, 2014)

On reliability enhancement using adaptive core voltage scaling and variations on nanoscale FPGAs. - Petr Pfeifer; Zdenek Plíva; Pieter Weckx; Ben Kaczer (LATW, 2014)

Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. - Vinicius V. A. Camargo; Ben Kaczer; Tibor Grasser; Gilson I. Wirth (Microelectron. Reliab., 2014)

Energy distribution of positive charges in high-k dielectric. - Sharifah Wan Muhamad Hatta; Zhigang Ji; Jianfu Zhang 001; Weidong Zhang 002; Norhayati Soin; Ben Kaczer; Stefan De Gendt; Guido Groeseneken (Microelectron. Reliab., 2014)

Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. - Vinicius V. A. Camargo; Ben Kaczer; Gilson I. Wirth; Tibor Grasser; Guido Groeseneken (IEEE Trans. Very Large Scale Integr. Syst., 2014)

Characterization and simulation methodology for time-dependent variability in advanced technologies. - Pieter Weckx; Ben Kaczer; Praveen Raghavan; Jacopo Franco; Marko Simicic; Philippe J. Roussel; Dimitri Linten; Aaron Thean; Diederik Verkest; Francky Catthoor; Guido Groeseneken (CICC, 2015)

Experimental evidences and simulations of trap generation along a percolation path. - Louis Gerrer; Razaidi Hussin; Salvatore M. Amoroso; Jacopo Franco; Pieter Weckx; Marko Simicic; N. Horiguchi; Ben Kaczer; Tibor Grasser; Asen Asenov (ESSDERC, 2015)

Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. - Razaidi Hussin; Louis Gerrer; Jie Ding; Liping Wang; Salvatore M. Amoroso; Binjie Cheng; Dave Reid; Pieter Weckx; Marko Simicic; Jacopo Franco; Annelies Vanderheyden; Danielle Vanhaeren; et al. (ESSDERC, 2015)

The defect-centric perspective of device and circuit reliability - From individual defects to circuits. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Erik Bury; Moonju Cho; Robin Degraeve; Dimitri Linten; Guido Groeseneken; Halil Kukner; Praveen Raghavan; Francky Catthoor; et al. (ESSDERC, 2015)

Off-state stress degradation mechanism on advanced p-MOSFETs. - Moonju Cho; Alessio Spessot; Ben Kaczer; Marc Aoulaiche; Romain Ritzenthaler; Tom Schram; Pierre Fazan; Naoto Horiguchi; Dimitri Linten (ICICDT, 2015)

Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations. - Azusa Oshima; Pieter Weckx; Ben Kaczer; Kazutoshi Kobayashi; Takashi Matsumoto (ICICDT, 2015)

Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. - Pieter Weckx; Ben Kaczer; Philippe J. Roussel; Francky Catthoor; Guido Groeseneken (ICICDT, 2015)

Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. - Ankush Chaudhary; Ben Kaczer; Philippe J. Roussel; Thomas Chiarella; Naoto Horiguchi; Souvik Mahapatra (IRPS, 2015)

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. - Jacopo Franco; Ben Kaczer; Philippe J. Roussel; Erik Bury; Hans Mertens; Romain Ritzenthaler; Tibor Grasser; Naoto Horiguchi; Aaron Thean; Guido Groeseneken (IRPS, 2015)

On the volatility of oxide defects: Activation, deactivation, and transformation. - Tibor Grasser; M. Wahl; Wolfgang Goes; Yannick Wimmer; Al-Moatasem El-Sayed; Alexander L. Shluger; Ben Kaczer (IRPS, 2015)

ESD characterization of planar InGaAs devices. - Zhigang Ji; Dimitri Linten; Roman Boschke; Geert Hellings; S. H. Chen; AliReza Alian; D. Zhou; Yves Mols; Tsvetan Ivanov; Jacopo Franco; Ben Kaczer; X. Zhang; et al. (IRPS, 2015)

Origins and implications of increased channel hot carrier variability in nFinFETs. - Ben Kaczer; Jacopo Franco; M. Cho; Tibor Grasser; Philippe J. Roussel; Stanislav Tyaginov; M. Bina; Yannick Wimmer; Luis-Miguel Procel; Lionel Trojman; Felice Crupi; Gregory Pitner; et al. (IRPS, 2015)

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. - Pieter Weckx; Ben Kaczer; C. Chen; Jacopo Franco; Erik Bury; Kausik Chanda; J. Watt; Philippe J. Roussel; Francky Catthoor; Guido Groeseneken (IRPS, 2015)

Characterization and modeling of reliability issues in nanoscale devices. - Gerhard Rzepa; Wolfgang Goes; Ben Kaczer; Tibor Grasser (ISCAS, 2015)

Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. - Halil Kükner; Pieter Weckx; Sébastien Morrison; Jacopo Franco; Maria Toledano-Luque; Moonju Cho; Praveen Raghavan; Ben Kaczer; Doyoung Jang; Kenichi Miyaguchi; Marie Garcia Bardon; Francky Catthoor; et al. (Microprocess. Microsystems, 2015)

Analysis of NBTI effects on high frequency digital circuits. - Ahmet Unutulmaz; Domenik Helms; Reef Eilers; Malte Metzdorf; Ben Kaczer; Wolfgang Nebel (DATE, 2016)

Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. - Francesco Maria Puglisi; Felipe Costantini; Ben Kaczer; Luca Larcher; Paolo Pavan (ESSDERC, 2016)

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. - Prateek Sharma; Stanislav Tyaginov; Stewart E. Rauch; Jacopo Franco; Ben Kaczer; Alexander Makarov; Mikhail I. Vexler; Tibor Grasser (ESSDERC, 2016)

Capturing True Workload Dependency of BTI-induced Degradation in CPU Components. - Dimitrios Stamoulis; Simone Corbetta; Dimitrios Rodopoulos; Pieter Weckx; Peter Debacker; Brett H. Meyer; Ben Kaczer; Praveen Raghavan; Dimitrios Soudris; Francky Catthoor; Zeljko Zilic (ACM Great Lakes Symposium on VLSI, 2016)

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; Dimitri Linten; Ingrid Verbauwhede (A-SSCC, 2018)

Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. - Erik Bury; Ben Kaczer; Simon Van Beek; Dimitri Linten (ESSDERC, 2018)

Self-heating-aware CMOS reliability characterization using degradation maps. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Kai-Hsin Chuang; Jacopo Franco; Marko Simicic; Pieter Weckx; Dimitri Linten (IRPS, 2018)

A multi-bit/cell PUF using analog breakdown positions in CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; T. Kallstenius; Guido Groeseneken; Dimitri Linten; Ingrid Verbauwhede (IRPS, 2018)

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. - Karine Florent; A. Subirats; Simone Lavizzari; Robin Degraeve; Umberto Celano; Ben Kaczer; Luca Di Piazza; Mihaela Ioana Popovici; Guido Groeseneken; Jan Van Houdt (IRPS, 2018)

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. - Jacopo Franco; Ben Kaczer; Adrian Vaisman Chasin; Erik Bury; Dimitri Linten (IRPS, 2018)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. - Tibor Grasser; Bernhard Stampfer; Michael Waltl; Gerhard Rzepa; Karl Rupp; Franz Schanovsky; Gregor Pobegen; Katja Puschkarsky; Hans Reisinger; Barry J. O'Sullivan; Ben Kaczer (IRPS, 2018)

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. - Vamsi Putcha; Jacopo Franco; Abhitosh Vais; Ben Kaczer; S. Sioncke; Dimitri Linten; Guido Groeseneken (IRPS, 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Comphy - A compact-physics framework for unified modeling of BTI. - Gerhard Rzepa; Jacopo Franco; Barry J. O'Sullivan; A. Subirats; Marko Simicic; Geert Hellings; Pieter Weckx; Markus Jech; Theresia Knobloch; Michael Waltl; Philippe Roussel; Dimitri Linten; et al. (Microelectron. Reliab., 2018)

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. - Alexander Makarov; Dimitri Linten; Stanislav Tyaginov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Markus Jech; Tibor Grasser (ESSDERC, 2019)

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. - Erik Bury; Adrian Vaisman Chasin; Michiel Vandemaele; Simon Van Beek; Jacopo Franco; Ben Kaczer; Dimitri Linten (IRPS, 2019)

CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. - Shih-Hung Chen; Dimitri Linten; Geert Hellings; Marko Simicic; Ben Kaczer; Thomas Chiarella; Hans Mertens; Jérôme Mitard; Anda Mocuta; N. Horiguchi (IRPS, 2019)

New Insights into the Imprint Effect in FE-HfO2 and its Recovery. - Yusuke Higashi; Karine Florent; A. Subirats; Ben Kaczer; Luca Di Piazza; Sergiu Clima; Nicolo Ronchi; Sean R. C. McMitchell; Kaustuv Banerjee; Umberto Celano; Masamichi Suzuki; Dimitri Linten; et al. (IRPS, 2019)

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. - Alexander Makarov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Alexander Grill; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Tibor Grasser; Dimitri Linten; Stanislav Tyaginov (IRPS, 2019)

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. - Barry J. O'Sullivan; Romain Ritzenthaler; Gerhard Rzepa; Z. Wu; E. Dentoni Litta; O. Richard; T. Conard; V. Machkaoutsan; Pierre Fazan; C. Kim; Jacopo Franco; Ben Kaczer; et al. (IRPS, 2019)

Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Zlatan Stanojevic; Alexander Makarov; Adrian Vaisman Chasin; Erik Bury; Hans Mertens; Dimitri Linten; Guido Groeseneken (IRPS, 2019)

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. - Zhicheng Wu; Jacopo Franco; Dieter Claes; Gerhard Rzepa; Philippe J. Roussel; Nadine Collaert; Guido Groeseneken; Dimitri Linten; Tibor Grasser; Ben Kaczer (IRPS, 2019)

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; Dimitri Linten; Ingrid Verbauwhede (IEEE J. Solid State Circuits, 2019)

Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. - Marko Simicic; Pieter Weckx; Bertrand Parvais; Philippe Roussel; Ben Kaczer; Georges G. E. Gielen (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. - Adrian Vaisman Chasin; Jacopo Franco; Erik Bury; Romain Ritzenthaler; Eugenio Dentoni Litta; Alessio Spessot; Naoto Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2020)

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. - Tibor Grasser; Ben Kaczer; Barry J. O'Sullivan; Gerhard Rzepa; Bernhard Stampfer; Michael Waltl (IRPS, 2020)

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. - Alexander Grill; Erik Bury; Jakob Michl; Stanislav Tyaginov; Dimitri Linten; Tibor Grasser; Bertrand Parvais; Ben Kaczer; Michael Waltl; Iuliana P. Radu (IRPS, 2020)

On the impact of mechanical stress on gate oxide trapping. - Anastasiia Kruv; Ben Kaczer; Alexander Grill; Mario Gonzalez; Jacopo Franco; Dimitri Linten; Wolfgang Goes; Tibor Grasser; Ingrid De Wolf (IRPS, 2020)

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. - Jakob Michl; Alexander Grill; Dieter Claes; Gerhard Rzepa; Ben Kaczer; Dimitri Linten; Iuliana P. Radu; Tibor Grasser; Michael Waltl (IRPS, 2020)

Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). - Subrat Mishra; Pieter Weckx; Ji-Yung Lin; Ben Kaczer; Dimitri Linten; Alessio Spessot; Francky Catthoor (IRPS, 2020)

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. - Vamsi Putcha; Erik Bury; Jacopo Franco; Amey Walke; Simeng Zhao; Uthayasankaran Peralagu; Ming Zhao; AliReza Alian; Ben Kaczer; Niamh Waldron; Dimitri Linten; Bertrand Parvais; et al. (IRPS, 2020)

A Compact Physics Analytical Model for Hot-Carrier Degradation. - Stanislav Tyaginov; Alexander Grill; Michiel Vandemaele; Tibor Grasser; Geert Hellings; Alexander Makarov; Markus Jech; Dimitri Linten; Ben Kaczer (IRPS, 2020)

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. - Michiel Vandemaele; Kai-Hsin Chuang; Erik Bury; Stanislav Tyaginov; Guido Groeseneken; Ben Kaczer (IRPS, 2020)

Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. - Jacopo Franco; Hiroaki Arimura; J.-F. de Marneffe; A. Vandooren; L.-Å. Ragnarsson; Zhicheng Wu; Dieter Claes; E. Dentoni Litta; N. Horiguchi; Kris Croes; Dimitri Linten; Tibor Grasser; et al. (ICICDT, 2021)

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. - Tibor Grasser; Barry J. O'Sullivan; Ben Kaczer; Jacopo Franco; Bernhard Stampfer; Michael Waltl (IRPS, 2021)

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. - Gerhard Rzepa; Markus Karner; Oskar Baumgartner; Georg Strof; Franz Schanovsky; Ferdinand Mitterbauer; Christian Kernstock; Hui-Wen Karner; Pieter Weckx; Geert Hellings; Dieter Claes; Zhicheng Wu; et al. (IRPS, 2021)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Physics-based device aging modelling framework for accurate circuit reliability assessment. - Zhicheng Wu; Jacopo Franco; Brecht Truijen; Philippe Roussel; Stanislav Tyaginov; Michiel Vandemaele; Erik Bury; Guido Groeseneken; Dimitri Linten; Ben Kaczer (IRPS, 2021)

A BSIM-Based Predictive Hot-Carrier Aging Compact Model. - Yang Xiang; Stanislav Tyaginov; Michiel Vandemaele; Zhicheng Wu; Jacopo Franco; Erik Bury; Brecht Truijen; Bertrand Parvais; Dimitri Linten; Ben Kaczer (IRPS, 2021)

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. - L. Panarella; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; I. Asselberghs; Ben Kaczer (DRC, 2022)

A comprehensive variability study of doped HfO2 FeFET for memory applications. - Nicolo Ronchi; Lars-Åke Ragnarsson; Umberto Celano; Ben Kaczer; K. Kaczmarek; K. Banerjee; Sean R. C. McMitchell; Geert Van den Bosch; Jan Van Houdt (IMW, 2022)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Michiel Vandemaele; Stanislav Tyaginov; Jacopo Franco; Romain Ritzenthaler; Hans Mertens; Pieter Weckx; N. Horiguchi; Dimitri Linten (IRPS, 2022)

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Erik Bury; Michiel Vandemaele; Ben Kaczer; Robin Degraeve (IRPS, 2022)

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. - Alexander Grill; V. John; Jakob Michl; A. Beckers; Erik Bury; Stanislav Tyaginov; Bertrand Parvais; Adrian Vaisman Chasin; Tibor Grasser; Michael Waltl; Ben Kaczer; Bogdan Govoreanu (IRPS, 2022)

Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. - Kookjin Lee; Ben Kaczer; Anastasiia Kruv; Mario Gonzalez; Geert Eneman; Oguzhan O. Okudur; Alexander Grill; Jacopo Franco; Andrea Vici; Robin Degraeve; Ingrid De Wolf (IRPS, 2022)

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. - Barry J. O'Sullivan; Brecht Truijen; Vamsi Putcha; Alexander Grill; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Md Nur K. Alam; Jan Van Houdt (IRPS, 2022)

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. - Brecht Truijen; Barry J. O'Sullivan; Md. Nurul Alam; Dieter Claes; Mischa Thesberg; Philippe Roussel; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Jan Van Houdt (IRPS, 2022)

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. - Stanislav Tyaginov; Aryan Afzalian; Alexander Makarov; Alexander Grill; Michiel Vandemaele; Maksim Cherenev; Mikhail I. Vexler; Geert Hellings; Ben Kaczer (IRPS, 2022)

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. - Stanislav Tyaginov; Alexander Makarov; Al-Moatasem Bellah El-Sayed; Adrian Vaisman Chasin; Erik Bury; Markus Jech; Michiel Vandemaele; Alexander Grill; An De Keersgieter; Mikhail I. Vexler; Geert Eneman; Ben Kaczer (IRPS, 2022)

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Erik Bury; Adrian Vaisman Chasin; Jacopo Franco; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2022)

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. - Md Nur K. Alam; Yusuke Higashi; Brecht Truijen; Ben Kaczer; Mihaela Ioana Popovici; Bj O'Sullivan; Philippe Roussel; Robin Degraeve; Marc M. Heyns; Jan Van Houdt (VLSI Technology and Circuits, 2022)

Reliability challenges in Forksheet Devices: (Invited Paper). - Erik Bury; Michiel Vandemaele; Jacopo Franco; Adrian Chasin; Stanislav Tyaginov; A. Vandooren; Romain Ritzenthaler; Hans Mertens; Javier Diaz-Fortuny; N. Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2023)

Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. - Javier Diaz-Fortuny; Dishant Sangani; Pablo Saraza-Canflanca; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2023)

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. - L. Panarella; Ben Kaczer; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; Dennis Lin; Stanislav Tyaginov; I. Asselberghs; Cesar J. Lockhart de la Rosa; Gouri Sankar Kar; Valeri Afanas'ev (IRPS, 2023)

The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper). - Dishant Sangani; Javier Diaz-Fortuny; Erik Bury; Ben Kaczer; Georges G. E. Gielen (IRPS, 2023)

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. - Pablo Saraza-Canflanca; Javier Diaz-Fortuny; Andrea Vici; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2023)

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. - Michiel Vandemaele; Ben Kaczer; Erik Bury; Jacopo Franco; Adrian Chasin; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2023)

Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. - Andrea Vici; Robin Degraeve; Philippe J. Roussel; Jacopo Franco; Ben Kaczer; Ingrid De Wolf (IRPS, 2023)

Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. - Jacopo Franco; Hiroaki Arimura; J.-F. de Marneffe; S. Brus; Romain Ritzenthaler; E. Dentoni Litta; Kris Croes; Ben Kaczer; N. Horiguchi (VLSI Technology and Circuits, 2023)

A Pragmatic Model to Predict Future Device Aging. - James Brown; Kean Hong Tok; Rui Gao 003; Zhigang Ji; Weidong Zhang 002; John S. Marsland; Thomas Chiarella; Jacopo Franco; Ben Kaczer; Dimitri Linten; Jianfu Zhang 001 (IEEE Access, 2023)

Silent Data Corruption: Test or Reliability Problem? - Erik Jan Marinissen; Harish Dattatraya Dixit; Ronald Shawn Blanton; Aaron Kuo; Wei Li; Subhasish Mitra; Chris Nigh; Ruben Purdy; Ben Kaczer; Dishant Sangani; Pieter Weckx; Philippe J. Roussel; et al. (ETS, 2024)

Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. - Yuanyang Guo; Robin Degraeve; Philippe Roussel; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (ICANN (10), 2024)

Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Alex Romano-Molar; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2024)

Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. - Y. Guo; Robin Degraeve; Michiel Vandemaele; Pablo Saraza-Canflanca; Jacopo Franco; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2024)

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. - Pietro Rinaudo; Adrian Vaisman Chasin; Ying Zhao; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Michiel J. van Setten; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers. - Dishant Sangani; Ben Kaczer; Pieter Weckx; Philippe J. Roussel; Subrat Mishra; Erik Jan Marinissen; Georges G. E. Gielen (IRPS, 2024)

Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. - Pablo Saraza-Canflanca; Dishant Sangani; Javier Diaz-Fortuny; Stanislav Tyaginov; Georges G. E. Gielen; Erik Bury; Ben Kaczer (IRPS, 2024)

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. - Ying Zhao; Pietro Rinaudo; Adrian Vaisman Chasin; Brecht Truijen; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. - Md Nur K. Alam; Sergiu Clima; Ben Kaczer; Philippe Roussel; Brecht Truijen; Lars-Åke Ragnarsson; N. Horiguchi; Marc M. Heyns; Jan Van Houdt (CoRR, 2024)

Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs. - R. Asanovski; Hiroaki Arimura; J. Ganguly; Pierpaolo Palestri; Alexander Grill; Ben Kaczer; Naoto Horiguchi; Luca Selmi; Jacopo Franco (IRPS, 2025)

Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM. - Javier Diaz-Fortuny; Mahdi Benkhelifa; Alexander Grill; Erik Bury; Robin Degraeve; Ben Kaczer; Hussam Amrouch (IRPS, 2025)

Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir Computing. - Yuanyang Guo; Robin Degraeve; Pablo Saraza-Canflanca; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)

TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. - G. Molinaro; Hiroaki Arimura; S. Sacchi; Andrea Vici; Robin Degraeve; Ben Kaczer; Naoto Horiguchi; M. Houssa; Jacopo Franco (IRPS, 2025)

Towards a Computationally Efficient Verilog-A Defect-Centric BTI Compact Model for Circuit Aging Simulations. - Dishant Sangani; Dieter Claes; Pieter Weckx; Ben Kaczer; Georges G. E. Gielen (IRPS, 2025)

A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A. - Dishant Sangani; Michiel Vandemaele; Stanislav Tyaginov; Erik Bury; Ben Kaczer; Georges G. E. Gielen (IRPS, 2025)