WS2 transistors on 300 mm wafers with BEOL compatibility. - Tom Schram; Quentin Smets; Benjamin Groven; M. H. Heyne; E. Kunnen; A. Thiam; Katia Devriendt; Annelies Delabie; Dennis Lin; M. Lux; Daniele Chiappe; I. Asselberghs; et al. (ESSDERC, 2017)

On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. - Dennis Lin; Xiangyu Wu; Vivek Mootheri; Daire Cott; Benjamin Groven; Pierre Morin; Inge Asselberghs; Iuliana P. Radu (DRC, 2021)

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. - Souvik Ghosh 001; Quentin Smets; S. Banerjee; Tom Schram; Koen Kennes; R. Verheyen; P. Kumar; M.-E. Boulon; Benjamin Groven; H. M. Silva; Shreya Kundu; Daire Cott; et al. (VLSI Technology and Circuits, 2023)

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. - Shreya Kundu; D. H. van Doip; Tom Schram; Quentin Smets; S. Banerjee; Benjamin Groven; Daire Cott; Stefan Decoster; P. Bezard; F. Lazzarino; K. Banerjee; Souvik Ghosh 001; et al. (VLSI Technology and Circuits, 2023)

EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. - S. Ghosh; A. Kruv; Quentin Smets; Tom Schram; D. J. Leech; T. Ding; V. Turkani; Benjamin Groven; A. Dangel; G. Probst; Thomas Uhrmann; Markus Wimplinger; et al. (VLSI Technology and Circuits, 2024)