Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks. - Benjamin Max; Michael Hoffmann 008; Stefan Slesazeck; Thomas Mikolajick (ESSDERC, 2018)

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. - Thomas Mikolajick; Halid Mulaosmanovic; Michael Hoffmann 008; Benjamin Max; Terence Mittmann; Uwe Schroeder; Stefan Slesazeck (DRC, 2019)

Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. - Patrick D. Lomenzo; Stefan Slesazeck; Michael Hoffmann 008; Thomas Mikolajick; Uwe Schroeder; Benjamin Max (NVMTS, 2019)

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. - Halid Mulaosmanovic; Patrick D. Lomenzo; Uwe Schroeder; Stefan Slesazeck; Thomas Mikolajick; Benjamin Max (IRPS, 2021)

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing. - Benjamin Max; Michael Hoffmann 008; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (CoRR, 2021)

Ferroelectric-based synapses and neurons for neuromorphic computing. - Erika Covi; Halid Mulaosmanovic; Benjamin Max; Stefan Slesazeck; Thomas Mikolajick (Neuromorph. Comput. Eng., 2022)

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. - Suzanne Lancaster; Mattia Segatto; Cláudia Silva; Benjamin Max; Thomas Mikolajick; David Esseni; Francesco Driussi; Stefan Slesazeck (DRC, 2023)

A pseudo-memcapacitive neurotransistor for spiking neural networks. - Richard Schroedter; Ahmet Samil Demirkol; Alon Ascoli; Benjamin Max; Florian Nebe; Thomas Mikolajick; Ronald Tetzlaff (MOCAST, 2023)