A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling. - Yogesh Singh Chauhan; François Krummenacher; Renaud Gillon; Benoit Bakeroot; Michel J. Declercq; Adrian M. Ionescu (VLSI Design, 2007)

A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers. - Jordie Buyle; Vincent De Gezelle; Benoit Bakeroot; Jan Doutreloigne (ICECS, 2008)

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. - Jie Hu; Steve Stoffels; Silvia Lenci; Nicolo Ronchi; Rafael Venegas; Shuzhen You; Benoit Bakeroot; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. - Tian-Li Wu; Denis Marcon; Brice De Jaeger; Marleen Van Hove; Benoit Bakeroot; Steve Stoffels; Guido Groeseneken; Stefaan Decoutere; Robin Roelofs (IRPS, 2015)

A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators. - Ramses Pierco; Guy Torfs; Jochen Verbrugghe; Benoit Bakeroot; Johan Bauwelinck (IEEE Trans. Circuits Syst. I Regul. Pap., 2015)

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. - Arno Stockman; Michael J. Uren; Alaleh Tajalli; Matteo Meneghini; Benoit Bakeroot; Peter Moens (ESSDERC, 2017)

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. - Arno Stockman; Eleonora Canato; Alaleh Tajalli; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Benoit Bakeroot (IRPS, 2018)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. - Eliana Acurio; Lionel Trojman; Brice De Jaeger; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2021)

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. - Olga Syshchyk; Thibault Cosnier; Zheng-Hong Huang; Deepthi Cingu; Dirk Wellekens; Anurag Vohra; Karen Geens; Pavan Vudumula; Urmimala Chatterjee; Stefaan Decoutere; Tian-Li Wu; Benoit Bakeroot (ESSDERC, 2022)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)