Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. - Benoit Lambert; Nathalie Malbert; Nathalie Labat; Frédéric Verdier; André Touboul; P. Huguet; R. Bonnet; G. Pataut (Microelectron. Reliab., 2001)

Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. - Nathalie Labat; Nathalie Malbert; Benoit Lambert; André Touboul; F. Garat; B. Proust (Microelectron. Reliab., 2002)

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. - Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Philippe Perdu; J. C. Clement; Benoit Lambert; M. Bonnet (Microelectron. Reliab., 2008)

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. - Mustapha Faqir; Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; Giovanni Verzellesi; Fausto Fantini (Microelectron. Reliab., 2010)

Reliability of high voltage/high power L/S-band Hbt technology. - Benoit Lambert; G. Jonsson; J. Bataille; C. Ollivier; P. Mezenge; H. Derewonko; H. Thomas; D. Floriot; Hervé Blanck; C. Moreau (Microelectron. Reliab., 2010)

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. - Laurent Brunel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat; Benoit Lambert (ESSDERC, 2012)

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. - Benoit Lambert; Nathalie Labat; Dominique Carisetti; Serge Karboyan; Jean-Guy Tartarin; Jim Thorpe; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Eddy Latu-Romain; Michel Mermoux (Microelectron. Reliab., 2012)

Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. - Benoit Lambert; Jim Thorpe; Reza Behtash; Bernd Schauwecker; Franck Bourgeois; Helmut Jung; Joëlle Bataille; Patrick Mezenge; Cyril Gourdon; Catherine Ollivier; Didier Floriot; Hervé Blanck (Microelectron. Reliab., 2012)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Qualification of 50 V GaN on SiC technology for RF power amplifiers. - P. J. van der Wel; T. Rödle; Benoit Lambert; Hervé Blanck; Maximilian Dammann (Microelectron. Reliab., 2013)

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. - Antonio Stocco; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Proton induced trapping effect on space compatible GaN HEMTs. - Antonio Stocco; Simone Gerardin; Davide Bisi; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. - O. Lazar; Jean-Guy Tartarin; Benoit Lambert; C. Moreau; J.-L. Roux (Microelectron. Reliab., 2015)

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. - James W. Pomeroy; Michael J. Uren; Benoit Lambert; Martin Kuball (Microelectron. Reliab., 2015)

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. - M. Rzin; Nathalie Labat; Nathalie Malbert; Arnaud Curutchet; Laurent Brunel; Benoit Lambert (Microelectron. Reliab., 2015)

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. - Jean-Guy Tartarin; O. Lazar; D. Saugnon; Benoit Lambert; C. Moreau; C. Bouexière; E. Romain-Latu; K. Rousseau; A. David; J.-L. Roux (Microelectron. Reliab., 2017)

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. - Francesca Chiocchetta; Carlo De Santi; Fabiana Rampazzo; Kalparupa Mukherjee; Jan Grünenpütt; Daniel Sommer; Hervé Blanck; Benoit Lambert; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)