The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire. - Benoit Voisin; Benoit Roche; Eva Dupont-Ferrier; Benoit Sklénard; Manuel Cobian; Xavier Jehl; Olga Cueto; Romain Wacquez; Maud Vinet; Yann-Michel Niquet; Silvano De Franceschi; Marc Sanquer (ESSDERC, 2013)

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper). - Benoit Sklénard; Philippe Blaise; Boubacar Traore; Alberto Dragoni; Cecile Nail; Elisa Vianello (ESSDERC, 2017)

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. - Gabriele Navarro; C. Sabbione; Valentina Meli; L. E. Nistor; M. Frei; Julien Garrione; M. Tessaire; F. Fillot; Nicolas Bernier; Emmanuel Nolot; Benoit Sklénard; J. Li; et al. (IMW, 2022)

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. - Tadeu Mota Frutuoso; Xavier Garros; Perrine Batude; Laurent Brunet; Joris Lacord; Benoit Sklénard; V. Lapras; Claire Fenouillet-Béranger; M. Ribotta; A. Magalhaes-Lucas; J. Kanyandekwe; R. Kies; et al. (VLSI Technology and Circuits, 2022)

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. - Daphnée Bosch; Abygaël Viey; Tadeu Mota Frutuoso; P. Lheritier; C. Licitra; Nada Zerhouni; A. Albouy; Laurent Brunet; A. Magalhaes-Lucas; L. M. B. da Silva; H. Boutry; M. Husien Fahmy Taha Abdelrahman; et al. (VLSI Technology and Circuits, 2024)