Component sizing for multi-source renewable energy systems. - James D. Clark; Bernard H. Stark (INDIN, 2009)

Experimental investigation of inductorless, single-stage boost rectification for sub-mW electromagnetic energy harvesters. - György D. Szarka; Plamen P. Proynov; Bernard H. Stark; Stephen G. Burrow; Neville McNeill (ISLPED, 2011)

Start-up circuit with low minimum operating power for microwatt energy harvesters. - Bernard H. Stark; György D. Szarka; Edward D. Rooke (IET Circuits Devices Syst., 2011)

Control of parallel single-phase inverters in a low-head pico-hydro off-grid network. - Sam J. Williamson; Antonio Griffo; Bernard H. Stark; Julian D. Booker (IECON, 2013)

Challenges for Energy Harvesting Systems Under Intermittent Excitation. - Guang Yang; Bernard H. Stark; Simon J. Hollis; Stephen G. Burrow (IEEE J. Emerg. Sel. Topics Circuits Syst., 2014)

Inductive power transfer for on-body sensors defining a design space for safe, wirelessly powered on-body health sensors. - Paul Worgan; Lindsay Clare; Plamen P. Proynov; Bernard H. Stark; David Coyle (PervasiveHealth, 2015)

Energy Neutral Activity Monitoring: Wearables Powered by Smart Inductive Charging Surfaces. - Xenofon Fafoutis; Lindsay Clare; Neil J. Grabham; Steve P. Beeby; Bernard H. Stark; Robert J. Piechocki; Ian Craddock (SECON, 2016)

Design of 370-ps Delay Floating-Voltage Level Shifters With 30-V/ns Power Supply Slew Tolerance. - Dawei Liu 003; Simon J. Hollis; Harry C. P. Dymond; Neville McNeill; Bernard H. Stark (IEEE Trans. Circuits Syst. II Express Briefs, 2016)

A New Design Technique for Sub-Nanosecond Delay and 200 V/ns Power Supply Slew-Tolerant Floating Voltage Level Shifters for GaN SMPS. - Dawei Liu 003; Simon J. Hollis; Bernard H. Stark (IEEE Trans. Circuits Syst. I Regul. Pap., 2019)

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation. - Saeed Jahdi; Mohammad Hedayati; Bernard H. Stark; Phil H. Mellor (IEEE Trans. Ind. Electron., 2020)

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET. - Juefei Yang; Saeed Jahdi; Bernard H. Stark; Ruizhu Wu; Olayiwola Alatise; Jose Angel Ortiz Gonzalez (IECON, 2021)