UHV/CVD growth of Si and Si: Ge alloys: chemistry, physics, and device applications. - Bernard S. Meyerson (Proc. IEEE, 1992)

Low-temperature Si and Si: Ge epitaxy by ultrahigh vacuum/chemical vapor deposition: Process fundamentals. - Bernard S. Meyerson (IBM J. Res. Dev., 2000)

Siliconsgermanium-based mixed-signal technology for optimization of wired and wireless telecommunications. - Bernard S. Meyerson (IBM J. Res. Dev., 2000)

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. - Seshadri Subbanna; Lawrence Larson; Greg G. Freeman; David Ahlgren; Kenneth J. Stein; Carl E. Dickey; James Mecke; A. Rincon; P. Bacon; Robert A. Groves; Mehmet Soyuer; David L. Harame; et al. (CICC, 2001)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. - David L. Harame; Kim M. Newton; Raminderpal Singh; Susan L. Sweeney; Sue E. Strang; Jeffrey B. Johnson; Scott M. Parker; Carl E. Dickey; Mete Erturk; Greg J. Schulberg; Donald L. Jordan; David C. Sheridan; et al. (IBM J. Res. Dev., 2003)

Message from the Vice President for Technology and Chief Technologist, IBM Technology Group. - Bernard S. Meyerson (IBM J. Res. Dev., 2003)

Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design. - Raminderpal Singh; David L. Harame; Bernard S. Meyerson (Proc. IEEE, 2005)

Collaborative innovation; a new lever in information technology development. - Bernard S. Meyerson (Hot Chips Symposium, 2006)

Keynote speaker: Driving innovation in the "post-silicon" world. - Bernard S. Meyerson (SoCC, 2012)