Subclasses of Self-Modifying Nets. - Bernd Heinemann (Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets, 1981)

Comments on I. Futo, T. Gergely. - Bernd Heinemann (International Working Conference on Model Realism, 1982)

Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. - Wolfgang Winkler; Johannes Borngräber; Heide Erzgraeber; Ha. Erzgraber; Bernd Heinemann; Dieter Knoll; H. Jörg Osten; Michael Pierschel; Klaus Pressel; Peter Schley (CICC, 1999)

Methods for generating and editing merged isotropic/anisotropic triangular-element meshes. - Mario Netzel; Bernd Heinemann; Maik Brett; Dagmar Schipanski (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1999)

Recombination current measurements in the space charge region of MOS field-induced pn junctions. - Roland Sorge; Bernd Heinemann (Microelectron. Reliab., 2001)

LC-oscillators above 100 GHz in silicon-based technology. - Wolfgang Winkler; Johannes Borngräber; Bernd Heinemann (ESSCIRC, 2004)

A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology. - Yevgen Borokhovych; Hans Gustat; Bernd Tillack; Bernd Heinemann; Yuan Lu; Wei-Min Lance Kuo; Xiangtao Li; Ramkumar Krithivasan; John D. Cressler (ESSCIRC, 2005)

A 10GS/s 2Vpp emitter follower only track and hold amplifier in SiGe BiCMOS technology. - Samiran Halder; Sabbir A. Osmany; Hans Gustat; Bernd Heinemann (ISCAS, 2006)

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. - Stefaan Decoutere; Stefaan Van Huylenbroeck; Bernd Heinemann; Alexander Fox; Pascal Chevalier 002; Alain Chantre; Thomas F. Meister; Klaus Aufinger; Michael Schröter (CICC, 2009)

122 GHz low-noise-amplifier in sige technology. - Wolfgang Winkler; Wojciech Debski; Bernd Heinemann; Falk Korndörfer; Holger Rücker; Klaus Schmalz; Christoph Scheytt; Bernd Tillack (ESSCIRC, 2009)

A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

A Subharmonic Receiver in SiGe Technology for 122 GHz Sensor Applications. - Klaus Schmalz; Wolfgang Winkler; Johannes Borngräber; Wojciech Debski; Bernd Heinemann; Christoph Scheytt (IEEE J. Solid State Circuits, 2010)

A 820GHz SiGe chipset for terahertz active imaging applications. - Erik Öjefors; Janus Grzyb; Yan Zhao 002; Bernd Heinemann; Bernd Tillack; Ullrich R. Pfeiffer (ISSCC, 2011)

SiGe BiCMOS technology for mm-wave systems. - Holger Rücker; Bernd Heinemann (ISOCC, 2012)

A Terahertz Detector Array in a SiGe HBT Technology. - Richard Al Hadi; Janus Grzyb; Bernd Heinemann; Ullrich R. Pfeiffer (IEEE J. Solid State Circuits, 2013)

14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS. - Ullrich R. Pfeiffer; Yan Zhao 002; Janus Grzyb; Richard Al Hadi; Neelanjan Sarmah; Wolfgang Forster; Holger Rücker; Bernd Heinemann (ISSCC, 2014)

Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology. - Dieter Knoll; Stefan Lischke; Lars Zimmermann; Bernd Heinemann; Daniel Micusík; P. Ostrovskyy; Georg Winzer; Marcel Kroh; Rainer Barth; Thomas Grabolla; K. Schulz; Mirko Fraschke; et al. (OFC, 2014)

A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications. - Ullrich R. Pfeiffer; Yan Zhao 002; Janusz Grzyb; Richard Al Hadi; Neelanjan Sarmah; Wolfgang Forster; Holger Rücker; Bernd Heinemann (IEEE J. Solid State Circuits, 2014)

25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS. - Janusz Grzyb; Bernd Heinemann; Ullrich R. Pfeiffer (ISSCC, 2016)

A 0.55 THz Near-Field Sensor With a µm-Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS. - Janusz Grzyb; Bernd Heinemann; Ullrich R. Pfeiffer (IEEE J. Solid State Circuits, 2016)

Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz. - Pedro Rodríguez-Vázquez; Janusz Grzyb; Neelanjan Sarmah; Ullrich R. Pfeiffer; Bernd Heinemann (NANOCOM, 2017)

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. - Pascal Chevalier 002; Michael Schröter; Colombo R. Bolognesi; Vincenzo d'Alessandro; Maria Alexandrova; Josef Böck; Ralf Flickiger; Sébastien Fregonese; Bernd Heinemann; Christoph Jungemann; Rickard Lovblom; Cristell Maneux; et al. (Proc. IEEE, 2017)

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. - Michael Schröter; Tommy Rosenbaum; Pascal Chevalier 002; Bernd Heinemann; Sorin P. Voinigescu; Ed Preisler; Josef Böck; Anindya Mukherjee (Proc. IEEE, 2017)

SiGe BiCMOS Current Status and Future Trends in Europe. - Pascal Chevalier 002; Wolfgang Liebl; Holger Rücker; Alexis Gauthier; Dirk Manger; Bernd Heinemann; Grégory Avenier; Josef Böck (BCICTS, 2018)

A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS. - Philipp Hillger; Ritesh Jain; Janusz Grzyb; Laven Mavarani; Bernd Heinemann; Gaetan MacGrogan; Patrick Mounaix; Thomas Zimmer; Ullrich R. Pfeiffer (ISSCC, 2018)

A 65 Gbps QPSK one meter wireless link operating at a 225-255 GHz tunable carrier in a SiGe HBT technology. - Pedro Rodríguez-Vázquez; Janusz Grzyb; Neelanjan Sarmah; Bernd Heinemann; Ullrich R. Pfeiffer (RWS, 2018)

A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging. - Philipp Hillger; Ritesh Jain; Janusz Grzyb; Wolfgang Forster; Bernd Heinemann; Gaetan MacGrogan; Patrick Mounaix; Thomas Zimmer; Ullrich R. Pfeiffer (IEEE J. Solid State Circuits, 2018)

Device Architectures for High-speed SiGe HBTs. - Holger Rücker; Bernd Heinemann (BCICTS, 2019)

Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology. - Pedro Rodríguez-Vázquez; Janusz Grzyb; Bernd Heinemann; Ullrich R. Pfeiffer (RWS, 2019)

3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. - Yaxin Zhang; Wenfeng Liang; Xiaodi Jin; Mario Krattenmacher; Sophia Falk; Paulius Sakalas; Bernd Heinemann; Michael Schröter (IEEE J. Solid State Circuits, 2020)

A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. - Thomas Bücher; Janusz Grzyb; Philipp Hillger; Holger Rücker; Bernd Heinemann; Ullrich R. Pfeiffer (ESSCIRC, 2021)

A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications. - Thomas Bücher; Janusz Grzyb; Philipp Hillger; Holger Rücker; Bernd Heinemann; Ullrich R. Pfeiffer (IEEE J. Solid State Circuits, 2022)

Durch Veränderung führen: Warum IT-Projekte ein kommunikatives Change-Management brauchen. - Bernd Heinemann (Wirtschaftsinformatik Manag., 2022)