High Performance 0.25µm GaN Technology with Low Memory Effects. - Bernhard Grote; Bruce Green; C. Gaw; Y. Wei; D. Hill; Philippe Renaud; J. Wan; C. Rampley; David Burdeaux; K. Foxx; M. Vadipour; D. Currier; et al. (BCICTS, 2023)

Advances in GaN HEMT and GaN Power Amplifier Techniques for Base-Stations. - Bernhard Grote; David Yu-Ting Wu; Bruce Green; Raphael Holin; David Burdeaux; Philippe Renaud; Humayun Kabir; Patrick Hu (BCICTS, 2024)