Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. - Viktor Sverdlov; Mario Bendra; Bernhard Pruckner; Simone Fiorentini; Wolfgang Goes; Siegfried Selberherr (ESSDERC, 2023)

Back-Hopping in Ultra-Scaled MRAM Cells. - Mario Bendra; Simone Fiorentini; Johannes Ender; R. L. de Orio; T. Hadámek; Nils Petter Jørstad; Bernhard Pruckner; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2023)

Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. - Mario Bendra; Bernhard Pruckner; R. L. de Orio; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (DRC, 2024)

Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. - Bernhard Pruckner; Nils Petter Jørstad; T. Hadámek; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov (MIPRO, 2024)