Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. - Bernhard Ruch; Gregor Pobegen; Christian Schleich; Tibor Grasser (IRPS, 2020)

Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. - Bernhard Ruch; Rajarshi Roy Chaudhuri; Boris Butej; Joao Gomes; Manuel Stabentheiner; Korbinian Reiser; Christian Koller; Dionyz Pogany; Clemens Ostermaier; Michael Waltl (IRPS, 2025)