Physical modeling of the hysteresis in M0S2 transistors. - Theresia Knobloch; Gerhard Rzepa; Yury Yu. Illarionov; Michael Waltl; Franz Schanovsky; Markus Jech; Bernhard Stampfer; Marco M. Furchi; Thomas Muller; Tibor Grasser (ESSDERC, 2017)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. - Tibor Grasser; Bernhard Stampfer; Michael Waltl; Gerhard Rzepa; Karl Rupp; Franz Schanovsky; Gregor Pobegen; Katja Puschkarsky; Hans Reisinger; Barry J. O'Sullivan; Ben Kaczer (IRPS, 2018)

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. - Tibor Grasser; Ben Kaczer; Barry J. O'Sullivan; Gerhard Rzepa; Bernhard Stampfer; Michael Waltl (IRPS, 2020)

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. - Tibor Grasser; Barry J. O'Sullivan; Ben Kaczer; Jacopo Franco; Bernhard Stampfer; Michael Waltl (IRPS, 2021)