A simulation study of the effect of ferroelectric thickness and oxide variation on the performance of Highly Doped Double Pocket Double Gate NCFET based inverter. - Malvika; Jagritee Talukdar; Bijit Choudhuri; Kavicharan Mummaneni (iSES, 2022)

Analysis of performance for novel pocket-doped NCFET under the influence of interface trap charges and temperature variation. - Malvika; Bijit Choudhuri; Kavicharan Mummaneni (Microelectron. J., 2022)

Study the impact of graphene channel over conventional silicon on DC/analog and RF performance of DG dual-material-gate VTFET. - Zohmingliana; Bijit Choudhuri; Brinda Bhowmick (Microelectron. J., 2022)

Achievement of extremely small subthreshold swing in Vertical Source-All-Around-TFET with suppressed ambipolar conduction. - Potharaju Ramesh; Bijit Choudhuri (Microelectron. J., 2023)

Unveiling the influence of temperature and interface traps on the performance of source-all-around vertical TFET. - Potharaju Ramesh; Bijit Choudhuri (Microelectron. J., 2024)

Analytical modeling of drain current for DG-Graphene Nanoribbon Vertical Tunnel FET. - Zohmingliana; Bijit Choudhuri; Brinda Bhowmick (Microelectron. J., 2024)

Investigation of hetero gate oxide hetero stacked triple metal vertical tunnel FET with variable interface trap charges and temperature. - Swapna Bharali; Bijit Choudhuri; Brinda Bhowmick (Microelectron. J., 2024)

Design of Dual-Band Rectifier Circuit for RF Energy Harvesting Using Double-Gate Graphene Nanoribbon (GNR) Vertical Tunnel FET. - Zohmingliana; Bijit Choudhuri; Brinda Bhowmick (IEEE Trans. Consumer Electron., 2024)