Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. - Bing-Liang Yang; N. W. Cheung; S. Denholm; J. Shao; Hei Wong; P. T. Lai; Y. C. Cheng (Microelectron. Reliab., 2002)

Conduction mechanisms in MOS gate dielectric films. - Bing-Liang Yang; P. T. Lai; Hei Wong (Microelectron. Reliab., 2004)

Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. - Bing-Liang Yang; Paul C. K. Kwok; P. T. Lai (Microelectron. Reliab., 2006)

Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation. - Banani Sen; Bing-Liang Yang; Hei Wong; Chi-Wah Kok; P. K. Chu; A. Huang (Microelectron. Reliab., 2008)

Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation. - Wing-Shan Tam; Sik-Lam Siu; Bing-Liang Yang; Chi-Wah Kok; Hei Wong (Microelectron. Reliab., 2011)