Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes. - Cong Liu; MouFu Kong; Hanzhi Chen; Bo Yi; Bingke Zhang; Xingbi Chen (ASICON, 2019)

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance. - Moufu Kong; Ke Huang; Ronghe Yan; Bo Yi; Bingke Zhang; Hongqiang Yang (ASICON, 2023)

A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance. - Moufu Kong; Qizhi Feng; Hongfei Deng; Zhaoyu Ai; Mingliang Yang; Ning Yu; Bingke Zhang; Bo Yi; Hongqiang Yang (Microelectron. J., 2025)

High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit. - Moufu Kong; Ning Yu; Yaowen Zhang; Zeyu Cheng; Bingke Zhang; Bo Yi; Hongqiang Yang (Microelectron. J., 2025)