Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. - D. Nirmal; P. Vijayakumar 003; Divya Mary Thomas; Binola K. Jebalin; N. Mohankumar 002 (Microelectron. Reliab., 2013)

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. - Binola K. Jebalin; A. Shobha Rekh; P. Prajoon; N. Mohankumar 002; D. Nirmal (Microelectron. J., 2015)

Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review. - J. Ajayan; D. Nirmal; Binola K. Jebalin; S. Sreejith (Microelectron. J., 2022)

Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. - Binola K. Jebalin; G. Gifta; S. Angen; P. Prajoon; D. Nirmal (Microelectron. J., 2023)

A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications. - J. S. Raj Kumar; H. Victor Du John; Binola K. Jebalin; J. Ajayan; Angelin Delighta A; D. Nirmal (Microelectron. J., 2023)

Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs. - S. Angen Franklin; Binola K. Jebalin; Subhash Chander; D. Nirmal (ICDCS, 2024)

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. - Binola K. Jebalin; S. Angen Franklin; G. Gifta; P. Prajoon; D. Nirmal (Microelectron. J., 2024)