Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. - Konrad Seidel; Kati Biedermann; Jan Van Houdt; Tarek Ali; Raik Hoffmann; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Philipp Steinke; K. Zimmermann (NVMTS, 2019)

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. - Tarek Ali; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Ricardo Olivo; David Lehninger; Konstantin Mertens; Franz Müller 001; Maximilian Lederer; Raik Hoffmann; Clemens Mart; et al. (IRPS, 2020)