Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements. - Chinchun Meng; Bo-Chen Tsou; Sheng-Che Tseng (IEICE Trans. Electron., 2005)

The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices. - Chinchun Meng; Jen-Yi Su; Bo-Chen Tsou; Guo-Wei Huang (IEICE Trans. Electron., 2006)