An FPGA prototype of current and voltage predictive controller for high switching frequency buck converter. - Bo Li 051; Xuefang Lin-Shi; Bruno Allard; Jean-Marie Retif (IECON, 2012)

Low Power Digital Alternative to Analog Control of Step-Down Converter. - Bo Li 051; Xuefang Lin-Shi; Bruno Allard (J. Low Power Electron., 2012)

A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Σ-Δ DPWM. - Bo Li 051; Xuefang Lin-Shi; Bruno Allard; Jean-Marie Retif (IEEE Trans. Ind. Informatics, 2012)

Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. - Yannan Xu; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Ming Liu 022 (Sci. China Inf. Sci., 2017)

Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory. - Jinshun Bi; Yuan Duan; Kai Xi; Bo Li 051 (Microelectron. Reliab., 2018)

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. - Binhong Li; Yang Huang 002; Jianfei Wu; Yunbo Huang; Bo Li 051; Qingzhu Zhang; Ling Yang; Fayu Wan; Jiajun Luo; Zhengsheng Han; Huaxiang Yin (Microelectron. Reliab., 2018)

Process variation dependence of total ionizing dose effects in bulk nFinFETs. - Bo Li 051; Yunbo Huang; Ling Yang; Qingzhu Zhang; Zhongshan Zheng; Binhong Li; Huiping Zhu; Jianhui Bu; Huaxiang Yin; Jiajun Luo; Zhengsheng Han; Haibin Wang (Microelectron. Reliab., 2018)

A single event upset tolerant latch design. - Haibin Wang; Xixi Dai; Yangsheng Wang; Issam Nofal; Li Cai; Zicai Shen; Wanxiu Sun; Jinshun Bi; Bo Li 051; Gang Guo; Li Chen 001; Sang H. Baeg (Microelectron. Reliab., 2018)

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. - Zhongshan Zheng; Zhentao Li; Bo Li 051; Jiajun Luo; Zhengsheng Han (ASICON, 2019)

Total ionizing dose effects on graphene-based charge-trapping memory. - Kai Xi; Jinshun Bi; Sandip Majumdar; Bo Li 051; Jing Liu 035; Yannan Xu; Ming Liu 022 (Sci. China Inf. Sci., 2019)

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. - Gangping Yan; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Linjie Fan; Huaxiang Yin (IEEE Access, 2020)

Soft Error Reliability Evaluation of Nanoscale Logic Circuits in the Presence of Multiple Transient Faults. - Shuo Cai; Binyong He; Weizheng Wang 002; Peng Liu 045; Fei Yu 009; Lairong Yin; Bo Li 051 (J. Electron. Test., 2020)

Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations. - Linjie Fan; Jinshun Bi; Kai Xi; Sandip Majumdar; Bo Li 051 (Sensors, 2020)

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. - Jianjian Wang; Jinshun Bi; Gang Liu; Hua Bai; Kai Xi; Bo Li 051; Sandip Majumdar; Lanlong Ji; Ming Liu 022; Zhangang Zhang (Sci. China Inf. Sci., 2021)

SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C). - Konstantin O. Petrosyants; Lev M. Sambursky; Maxim V. Kozhukhov; Mamed R. Ismail-Zade; Igor A. Kharitonov; Bo Li 051 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2021)

The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology. - Xu Zhang; Fanyu Liu; Bo Li 051; Siyuan Chen; Yang Huang 002; Jiangjiang Li; Jian Jiao; Tianchun Ye 001; Jiajun Luo (APCCAS, 2022)

Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology. - Junjun Zhang; Fanyu Liu; Bo Li 051; Yang Huang 002; Siyuan Chen; Yuchong Wang; Jiajun Luo; Jing Wan (IRPS, 2022)

Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology. - Fayu Wan; Taochen Gu; Binhong Li; Bo Li 051; Wenceslas Rahajandraibe; Mathieu Guerin; Sébastien Lalléchère; Blaise Ravelo (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022)

The Effects of $ gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. - Yuchong Wang; Siyuan Chen; Fanyu Liu; Bo Li 051; Jiangjiang Li; Yang Huang 002; Tiexin Zhang; Xu Zhang; Zhengsheng Han; Tianchun Ye 001; Jing Wan (IRPS, 2023)

A highly reliable and low-power cross-coupled 18T SRAM cell. - Shuo Cai; Yan Wen; Jiangbiao Ouyang; Weizheng Wang 002; Fei Yu 009; Bo Li 051 (Microelectron. J., 2023)

Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. - Tian Han; Fazhan Zhao; Xiaowu Cai; Liang Shan 015; Yun Tang; Bo Li 051 (Microelectron. J., 2023)

An on-chip integrated current sensor with high precision and large current range for smart power ICs. - Ruirui Xia; Xiaowu Cai; Liqiang Ding; Mali Gao; Yuexin Gao; Tian Han; Jianying Dang; Bo Li 051 (Microelectron. J., 2023)

An integrated capacitor-less LDO with transient and stability enhancement. - Yafei Xie; Xiaowu Cai; Yu Lu; Jianying Dang; Longli Pan; Mali Gao; Lei Wang; Bo Li 051 (IEICE Electron. Express, 2024)

A dual-mode buck converter with dynamic sawtooth voltage for wide input voltage range application. - Yafei Xie; Xiaowu Cai; Yu Lu; Longli Pan; Jian Lu; Lei Wang; Bo Li 051 (IEICE Electron. Express, 2024)

A precision current sensing circuit with chopper amplifier of symmetric topology. - Tian Han; Fazhan Zhao; Ximing Fu; Xiaowu Cai; Weiwei Yan; Haitao Zhao; Wenxin Zhao; Bo Li 051 (Microelectron. J., 2024)

A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs. - Jianying Dang; Xiaowu Cai; Longli Pan; Liang Shan 015; Yu Lu; Yafei Xie; Xupeng Wang; Shiping Wang; Bo Li 051 (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC. - Yu Lu; Xiaowu Cai; Jian Lu; Longli Pan; Jianying Dang; Yafei Xie; Xupeng Wang; Bo Li 051 (IEEE Trans. Very Large Scale Integr. Syst., 2024)

An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap. - Tiexin Zhang; Fanyu Liu; Lei Shu; Siyuan Chen; Yuchong Wang; Yuchen Wu; Jing Wan; Yong Xu; Shi Li 001; Yuyang Ding; Bo Li 051; Zhengsheng Han; et al. (IEEE Access, 2025)

A 600-V half-bridge gate drive circuit with high-speed and high-noise-immunity level shifter. - Xupeng Wang; Xiaowu Cai; Yu Lu; Jianying Dang; Longli Pan; Jian Lu; Liang Shan 015; Lei Wang; Bo Li 051 (Microelectron. J., 2025)

Radiation Dose Detector of γ-Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration. - Tiexin Zhang; Fanyu Liu; Lei Shu; Siyuan Chen; Yuchong Wang; Yuchen Wu; Jing Wan; Yong Xu; Shi Li 001; Yuyang Ding; Bo Li 051; Zhengsheng Han; et al. (IEEE Trans. Instrum. Meas., 2025)

RIVL: A Low-Cost SoC Agile Development Platform for Multiple RISC-V Processors Design and Verification. - Lida Xu; Zewen Cao; Hualong Zhao; Zhuo Peng; Yuchi Miao; Chunan Zhuang; Hongrui Ruan; Yuying Dong; Chuanbin Zeng; Bo Li 051; Jiajun Luo (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)

Single-Event Upset Monitor-Based Radiation-Hardened Latch for Multi-Node Upset. - Zhan Zheyu; Hainan Liu; Duoli Li; Ma Quangang; Wenxin Zhao; Zhenzhen Yan; Bo Li 051 (IEEE Trans. Circuits Syst. II Express Briefs, 2025)