A 32-bank 1 Gb self-strobing synchronous DRAM with 1 GByte/s bandwidth. - Jei-Hwan Yoo; Chang-Hyun Kim; Kyu-Chan Lee; Kye-Hyun Kyung; Seung-Moon Yoo; Jung-Hwa Lee; Moon-Hae Son; Jin-Man Han; Bok-Moon Kang; Ejaz Haq; Sang-Bo Lee; Jai-Hoon Sim; et al. (IEEE J. Solid State Circuits, 1996)

Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM. - Wenqi Wang; Sang Don Yi; Fu Li; Qingchen Cao; Jiangliu Shi; Bok-Moon Kang; Meichen Jin; Chang Liu; Zhenhua Wu; Guilei Wang; Chao Zhao (IEEE Access, 2024)