A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. - Jin-Seok Heo; Kihan Kim; Dong-Hoon Lee; Chang-Kyo Lee; Daesik Moon; Kiho Kim; Jin-Hyeok Baek; Sung-Woo Yoon; Hui-Kap Yang; Kyungryun Kim; Youngjae Kim; Bokgue Park; et al. (VLSI Circuits, 2019)

A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. - Dae-Hyun Kim 003; Byungkyu Song; Hyun-A. Ahn; Woongjoon Ko; Sung-Geun Do; Seokjin Cho; Kihan Kim; Seung-Hoon Oh; Hye-Yoon Joo; Geuntae Park; Jin-Hun Jang; Yong-Hun Kim; et al. (ISSCC, 2022)