A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%). - Dae-Myeong Geum; Jinha Lim; Junho Jang; Seungyeop Ahn; SeongKwang Kim; Joonsup Shim; Bong Ho Kim; Juhyuk Park; Woo Jin Baek; Jaeyong Jeong; Sanghyeon Kim (VLSI Technology and Circuits, 2022)

Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. - Song-Hyeon Kuk; Jae-Hoon Han; Bong Ho Kim; Junpyo Kim; Sang-Hyeon Kim (IMW, 2023)

Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing. - Jaeyong Jeong; Seong Kwang Kim; Yoon-Je Suh; Jisung Lee; Joonyoung Choi; Juhyuk Park; Joon Pyo Kim; Bong Ho Kim; Younjung Jo; Seung-Young Park; Jongmin Kim; Sanghyeon Kim (VLSI Technology and Circuits, 2023)

Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si. - Song-Hyeon Kuk; Jae-Hoon Han; Bong Ho Kim; Joon Pyo Kim; Sang-Hyeon Kim (VLSI Technology and Circuits, 2023)

First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication. - Nahyun Rheem; Jaeyong Jeong; Yoon-Je Suh; Chan Jik Lee; Bong Ho Kim; Joon Pyo Kim; Seong Kwang Kim; Hyeongrak Lim; Jongmin Kim; Dae-Hwan Ahn; Jae-Hoon Han; Jongwon Lee; et al. (VLSI Technology and Circuits, 2024)

Proposal of Block Erase and Verify Schemes for Ferroelectric NAND: Overcoming Critical Challenges from Threshold Voltage Polarity. - Song-Hyeon Kuk; Bong Ho Kim; Young-Keun Park; Hyeon-Seong Hwang; Jae-Hoon Han; Byung Jin Cho; Byung Chul Jang; Sang-Hyeon Kim (IMW, 2025)