High-voltage wordline generator for low-power program operation in NAND flash memories. - Samkyu Won; Yujong Noh; Hyunchul Cho; Jeil Ryu; Sungwook Choi; Sungdae Choi; DuckJu Kim; Junseop Chung; Bong-Seok Han; Eui-Young Chung (A-SSCC, 2011)

A 32Gb MLC NAND flash memory with Vth margin-expanding schemes in 26nm CMOS. - Tae-yun Kim; Sang-Don Lee; Jin-su Park; Ho-youb Cho; Byoung-sung You; Kwang-ho Baek; Jae-ho Lee; Chang-won Yang; Misun Yun; Min-su Kim; Jongwoo Kim; Eun-seong Jang; et al. (ISSCC, 2011)

Efficiency optimization of charge pump circuit in NAND FLASH memory. - Sungwook Choi; DuckJu Kim; JunSeob Chung; Bong-Seok Han; Jea-Gun Park (IEICE Electron. Express, 2011)

Page overwriting method for performance improvement of NAND flash memories. - Samkyu Won; Eui-Young Chung; DuckJu Kim; Junseop Chung; Bong-Seok Han; Hyuk-Jun Lee (IEICE Electron. Express, 2013)