16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current ( pA) Self-Selective Cells. - Yaxin Ding; Jianguo Yang; Yu Liu; Jianfeng Gao 005; Yuan Wang; Pengfei Jiang; Shuxian Lv; Yuting Chen; Boping Wang; Wei Wei; Tiancheng Gong; Kanhao Xue; et al. (VLSI Technology and Circuits, 2023)