A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. - D. Wieland; S. Ofner; Manuel Stabentheiner; Boris Butej; Christian Koller; J. Sun; Andrea Minetto; Korbinian Reiser; Oliver Häberlen; Michael Nelhiebel; Michael Glavanovics; Dionyz Pogany; et al. (IRPS, 2023)

Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. - Bernhard Ruch; Rajarshi Roy Chaudhuri; Boris Butej; Joao Gomes; Manuel Stabentheiner; Korbinian Reiser; Christian Koller; Dionyz Pogany; Clemens Ostermaier; Michael Waltl (IRPS, 2025)