On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. - Boubacar Traore; Elisa Vianello; Gabriel Molas; Marc Gely; Jean-François Nodin; Eric Jalaguier; Philippe Blaise; Barbara De Salvo; Leonardo R. C. Fonseca; Kanhao Xue; Yoshio Nishi (ESSDERC, 2013)

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design. - Elisa Vianello; Olivier Thomas; M. Harrand; Santhosh Onkaraiah; T. Cabout; Boubacar Traore; T. Diokh; Houcine Oucheikh; Luca Perniola; Gabriel Molas; Philippe Blaise; J.-F. Nodin; et al. (ICICDT, 2013)

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper). - Benoit Sklénard; Philippe Blaise; Boubacar Traore; Alberto Dragoni; Cecile Nail; Elisa Vianello (ESSDERC, 2017)