A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects. - Mark Durlam; Peter J. Naji; Asim Omair; Mark Deherrera; John Calder; Jon M. Slaughter; Brad N. Engel; Nicholas D. Rizzo; Greg Grynkewich; Brian Butcher; Clarence Tracy; Ken Smith; et al. (IEEE J. Solid State Circuits, 2003)

Magnetoresistive random access memory using magnetic tunnel junctions. - Saied Tehrani; Jon M. Slaughter; Mark Deherrera; Brad N. Engel; Nicholas D. Rizzo; John Salter; Mark Durlam; Renu W. Dave; Jason Janesky; Brian Butcher; Ken Smith; Greg Grynkewich (Proc. IEEE, 2003)