Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. - Brahim Benbakhti; Michel Rousseau; J.-C. de Jaeger (Microelectron. J., 2007)

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. - Brahim Benbakhti; J. S. Ayubi-Moak; Karol Kalna; D. Lin; Geert Hellings; Guy Brammertz; Kristin De Meyer; Iain Thayne; Asen Asenov (Microelectron. Reliab., 2010)

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures. - Khaled Ahmeda; Brendan Ubochi; Brahim Benbakhti; Steven J. Duffy; Ali Soltani; Wei Dong Zhang 002; Karol Kalna (IEEE Access, 2017)

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. - Steven J. Duffy; Brahim Benbakhti; Karol Kalna; Mohammed Boucherta; Wei Dong Zhang 002; Nour-Eddine Bourzgui; Ali Soltani (IEEE Access, 2018)