The effects of radiation on the terrestrial operation of SiC MOSFETs. - Akin Akturk; James McGarrity; Neil Goldsman; Daniel J. Lichtenwalner; Brett Hull; Dave Grider; Richard Wilkins (IRPS, 2018)

Reliability studies of SiC vertical power MOSFETs. - Daniel J. Lichtenwalner; Brett Hull; Edward Van Brunt; Shadi Sabri; Donald A. Gajewski; Dave Grider; Scott Allen; John W. Palmour; Akin Akturk; James McGarrity (IRPS, 2018)

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. - Satyaki Ganguly; Daniel J. Lichtenwalner; Caleb Isaacson; Donald A. Gajewski; Philipp Steinmann; Ryan Foarde; Brett Hull; Sei-Hyung Ryu; Scott Allen; John W. Palmour (IRPS, 2022)

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. - In-Hwan Ji; Anoop Mathew; Jae-Hyung Park; Neal Oldham; Matthew McCain; Shadi Sabri; Edward Van Brunt; Brett Hull; Daniel J. Lichtenwalner; Donald A. Gajewski; John W. Palmour (IRPS, 2023)

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. - Ayan K. Biswas; Daniel J. Lichtenwalner; Jae-Hyung Park; Brett Hull; Satyaki Ganguly; Donald A. Gajewski; Elif Balkas (IRPS, 2024)