Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers. - Jonathan P. Sculley; Brian Markman; Utku Soylu; Yihao Fang; Miguel E. Urteaga; Andy D. Carter; Mark J. W. Rodwell; Paul D. Yoder (BCICTS, 2019)

First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors. - Jonathan P. Sculley; Yihao Fang; Brian Markman; Miguel E. Urteaga; Andy D. Carter; Mark J. W. Rodwell; Paul D. Yoder (DRC, 2019)

Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz. - Brian Markman; Simone Tommaso Suran Brunelli; Matthew Guidry; Logan Whitaker; Mark J. W. Rodwell (DRC, 2021)

Transistors for 100-300GHz Wireless. - Mark J. W. Rodwell; Brian Markman; Yihao Fang; Logan Whitaker; Hsin-Ying Tseng; Ahmed S. H. Ahmed (ESSDERC, 2021)

Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications. - Logan Whitaker; Brian Markman; Mark J. W. Rodwell (DRC, 2023)