A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μ m 2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS. - Sarvesh H. Kulkarni; Zhanping Chen; Jun He; Lei Jiang 013; Brian Pedersen; Kevin Zhang 001 (IEEE J. Solid State Circuits, 2010)

Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process. - Sarvesh H. Kulkarni; Zhanping Chen; Balaji Srinivasan; Brian Pedersen; Uddalak Bhattacharya; Kevin Zhang 001 (VLSIC, 2015)

A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS. - Sarvesh H. Kulkarni; Zhanping Chen; Balaji Srinivasan; Brian Pedersen; Uddalak Bhattacharya; Kevin Zhang 001 (IEEE J. Solid State Circuits, 2016)