Virtual-Source Modeling of N-polar GaN MISHEMTS. - Rohit R. Karnaty; Umesh K. Mishra; James F. Buckwalter; Matthew Guidry; Pawana Shrestha; Brian Romanczyk; Nirupam Hatui; Xun Zheng; Christian Wurm; Haoran Li; Stacia Keller (BCICTS, 2019)

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. - Wenjian Liu; Islam Sayed; Brian Romanczyk; Nirupam Hatui; Jana Georgieva; Haoran Li; Stacia Keller; Umesh K. Mishra (DRC, 2020)

A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. - Pawana Shrestha; Matthew Guidry; Brian Romanczyk; Rohit R. Karnaty; Nirupam Hatui; Christian Wurm; Athith Krishna; Shubhra S. Pasayat; Stacia Keller; James F. Buckwalter; Umesh K. Mishra (DRC, 2020)

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. - Francesca Chiocchetta; Claudia Calascione; Carlo De Santi; Chandan Sharma; Fabiana Rampazzo; Xun Zheng; Brian Romanczyk; Matthew Guidry; Haoran Li; Stacia Keller; Umesh K. Mishra; Gaudenzio Meneghesso; et al. (IRPS, 2021)

Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. - Emre Akso; Christopher Clymore; Wenjian Liu; Henry Collins; Brian Romanczyk; Weiyi Li; Nirupam Hatui; Christian Wurm; Stacia Keller; Matthew Guidry; Umesh K. Mishra (DRC, 2023)