Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability. - Bruce M. Paine; Richard C. Wong; Adele E. Schmitz; Robert H. Walden; Loi D. Nguyen; Michael J. Delaney; Kenny C. Hum (Microelectron. Reliab., 2001)

The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes. - Bruce M. Paine; Ami P. Shah; Thomas Rust (Microelectron. Reliab., 2003)

Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process. - William J. Rowe; Bruce M. Paine; Adele E. Schmitz; Robert H. Walden; Michael J. Delaney (Microelectron. Reliab., 2003)

High-resolution transmission electron microscopy on aged InP HBTs. - Bruce M. Paine; Timothy J. Perham; Stephen Thomas III (Microelectron. Reliab., 2004)

Degradation rate for surface pitting in GaN HEMT. - Bruce M. Paine; Vincent T. Ng; Steve R. Polmanter; Neil T. Kubota; Carl R. Ignacio (IRPS, 2015)

Scaling DC lifetests on GaN HEMT to RF conditions. - Bruce M. Paine (Microelectron. Reliab., 2015)