Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. - Michelly de Souza; Bruna Cardoso Paz; Denis Flandre; Marcelo Antonio Pavanello (Microelectron. Reliab., 2013)

Analog performance of strained SOI nanowires down to 10K. - Bruna Cardoso Paz; Marcelo Antonio Pavanello; Mikaël Cassé; Sylvain Barraud; Gilles Reimbold; Maud Vinet; Olivier Faynot (ESSDERC, 2016)

Drain current model for short-channel triple gate junctionless nanowire transistors. - Bruna Cardoso Paz; Mikaël Cassé; Sylvain Barraud; Gilles Reimbold; Olivier Faynot; F. Avila-Herrera; Antonio Cerdeira; Marcelo Antonio Pavanello (Microelectron. Reliab., 2016)

Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. - Bruna Cardoso Paz; Renan Trevisoli Doria; Mikaël Cassé; Sylvain Barraud; Gilles Reimbold; Maud Vinet; Olivier Faynot; Marcelo Antonio Pavanello (Microelectron. Reliab., 2017)

Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology. - Bruna Cardoso Paz; Victor El-Homsy; David J. Niegemann; Bernhard Klemt; Emmanuel Chanrion; Vivien Thiney; Baptiste Jadot; Pierre-André Mortemousque; Benoit Bertrand; Thomas Bedecarrats; Heimanu Niebojewski; François Perruchot; et al. (ESSCIRC, 2022)

Specificities of linear Si QD arrays integration and characterization. - Heimanu Niebojewski; Benoit Bertrand; Etienne Nowak; Thomas Bedecarrats; Bruna Cardoso Paz; Lauriane Contamin; Pierre-André Mortemousque; V. Labracherie; L. Brevard; H. Sahin; Jean Charbonnier; C. Thomas; et al. (VLSI Technology and Circuits, 2022)

Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications. - G. Elbaz; Mikaël Cassé; V. Labracherie; G. Roussely; Benoit Bertrand; Heimanu Niebojewski; Maud Vinet; F. Balestro; Matias Urdampilleta; Tristan Meunier; Bruna Cardoso Paz (ESSDERC, 2023)