Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC. - Bruna Mazza; Salvatore Patané; Francesco Cordiano; Massimiliano Giliberto; Giovanni Renna; Andrea Severino; Edoardo Zanetti; Massimo Boscaglia; Giovanni Franco (IRPS, 2021)

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer. - Mario Santo Alessandrino; Beatrice Carbone; Francesco Cordiano; Bruna Mazza; Alfio Russo; W. Coco; Massimo Boscaglia; A. Di Salvo; A. Lombardo; D. Scarcella; Elisa Vitanza; Patrick Fiorenza (IRPS, 2022)