0.15 μm GaN HPA MMIC for 6G Upper-Mid Band. - Junhyung Jeong; Kyujun Cho; Junhyung Kim; Honggu Ji; Woojin Chang; Jongmin Lee; Byoung-Gue Min; Jongyul Park; Gyejung Lee; Dongmin Kang (ICTC, 2024)

Enhancing Ohmic Contacts in GaN HEMT Through Optimization of Ramp-Up Rate in Annealing Process. - Junhyung Kim; Gyejung Lee; Kyujun Cho; Jong Yul Park; Byoung-Gue Min; Junhyung Jeong; Honggu Ji; Woojin Chang; Jong-Min Lee; Dong-Min Kang (ICTC, 2024)

GaAs mHEMT Technology Achieving a High Cut-Off Frequncy of 446 GHz with a Gate Length of 75 nm. - Jong Yul Park; Byoung-Gue Min; Jong-Min Lee; Woojin Chang; Honggu Ji; Junhyung Jeong; Junhyung Kim; Gyejung Lee; Kyujun Cho; Dong Min Kang (ICTC, 2024)