Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric. - Myung Hun Woo; Byung Chul Jang; Junhwan Choi; Gwang Hyuk Shin; Hyejeong Seong; Sung Gap Im; Sung-Yool Choi (ESSDERC, 2016)

Highly Reliable Synaptic Cell Array Based on Organic-Inorganic Hybrid Bilayer Stack toward Precise Offline Learning. - Jun-Hwe Cha; Byung Chul Jang; Jungyeop Oh; Changhyeon Lee; Sang Yoon Yang; Hamin Park; Sung Gap Im; Sung-Yool Choi (Adv. Intell. Syst., 2022)

Memristor-Based Security Primitives Robust to Malicious Attacks for Highly Secure Neuromorphic Systems. - Jungyeop Oh; Sungkyu Kim; Junhwan Choi; Jun-Hwe Cha; Sung Gap Im; Byung Chul Jang; Sung-Yool Choi (Adv. Intell. Syst., 2022)

Proposal of Block Erase and Verify Schemes for Ferroelectric NAND: Overcoming Critical Challenges from Threshold Voltage Polarity. - Song-Hyeon Kuk; Bong Ho Kim; Young-Keun Park; Hyeon-Seong Hwang; Jae-Hoon Han; Byung Jin Cho; Byung Chul Jang; Sang-Hyeon Kim (IMW, 2025)

Understanding of Incremental Step Pulse Programming (ISPP) Slope Degradation in 3D NAND and its Band-Engineered Trap Layer Solution. - Ki Han Kim; Woo Cheol Shin; Ui Do Ji; Yeong Kwon Kim; Namju Kim; Han Byeol Oh; Sang Hyun Oh; Byung Chul Jang (IRPS, 2025)