Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. - Byungkyu Song; Taehui Na; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISLPED, 2015)

Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. - Byungkyu Song; Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2015)

Equalization scheme analysis for high-density spin transfer torque random access memory. - Beomsang Yoo; Taehui Na; Byungkyu Song; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISOCC, 2016)

An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. - Taehui Na; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE J. Solid State Circuits, 2017)

A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. - Byungkyu Song; Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2017)

Analysis on Sensing Yield of Voltage Latched Sense Amplifier for Low Power DRAM. - Suk Min Kim; Byungkyu Song; Tae Woo Oh; Seong-Ook Jung (PRIME, 2018)

Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2018)

Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region. - Byungkyu Song; Sara Choi; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2019)

A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. - Sara Choi; Hong Keun Ahn; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Sensing Margin Enhancement Technique Utilizing Boosted Reference Voltage for Low-Voltage and High-Density DRAM. - Suk Min Kim; Byungkyu Song; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. - Taehui Na; Byungkyu Song; Sara Choi; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Highly Independent MTJ-Based PUF System Using Diode-Connected Transistor and Two-Step Postprocessing for Improved Response Stability. - Sehee Lim; Byungkyu Song; Seong-Ook Jung (IEEE Trans. Inf. Forensics Secur., 2020)

Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction. - Sara Choi; Hong Keun Ahn; Byungkyu Song; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Imbalance-Tolerant Bit-Line Sense Amplifier for Dummy-Less Open Bit-Line Scheme in DRAM. - Suk Min Kim; Byungkyu Song; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique. - Byungkyu Song; Sehee Lim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Inf. Forensics Secur., 2021)

A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. - Dae-Hyun Kim 003; Byungkyu Song; Hyun-A. Ahn; Woongjoon Ko; Sung-Geun Do; Seokjin Cho; Kihan Kim; Seung-Hoon Oh; Hye-Yoon Joo; Geuntae Park; Jin-Hun Jang; Yong-Hun Kim; et al. (ISSCC, 2022)

A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array. - Tae-Hyun Kim; Byungkyu Song; In Jun Jung; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)