16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). - Laurent Grenouillet; Justine Barbot; J. Laguerre; Simon Martin 006; Catherine Carabasse; M. Louro; Messaoud Bedjaoui; S. Minoret; S. Kerdilès; C. Boixaderas; Thomas Magis; Carine Jahan; et al. (IRPS, 2023)