Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; P. Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. - Alexis Gauthier; Julien Borrel; Pascal Chevalier 002; Grégory Avenier; A. Montagné; M. Juhel; R. Duru; L.-R. Clément; C. Borowiak; Michel Buczko; Christophe Gaquière (BCICTS, 2018)

Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration. - R. Berthelon; Olivier Weber; F. Ibars; B. Revel; C. Borowiak; J. C. Grenier; B. Dumont; S. Desmoulins; P. O. Sassoulas; P. Ferreira; S. Chouteau; S. Niel; et al. (VLSI Technology and Circuits, 2024)